IndiumV3, Main, Repository, bibRecord, 000588

Role of nitridation on polarity and growth of InN by metal-organic vapor phase epitaxy

Identifieur interne : 000588 ( Main/Repository ); précédent : 000587; suivant : 000589

Role of nitridation on polarity and growth of InN by metal-organic vapor phase epitaxy

Auteurs : RBID : Pascal:13-0219408

Descripteurs français

Pascal (Inist)
- Nitruration, Polarité, Mécanisme croissance, Composé III-V, Méthode MOVPE, Epitaxie phase vapeur, Cristallinité, Morphologie surface, Couche mélangée, Couche mince, Rugosité, Dépendance température, Méthode phase vapeur, Croissance cristalline, Nitrure d'indium, Nitrure d'aluminium, Monocristal, Saphir, InN, Substrat métal, Substrat saphir, 8165L, 8110A, 8115K, 8110B.

English descriptors

KwdEn :
- Aluminium nitride, Crystal growth, Crystallinity, Growth from vapor, Growth mechanism, III-V compound, Indium nitride, MOVPE method, Mixed layer, Monocrystals, Nitridation, Polarity, Roughness, Sapphire, Surface morphology, Temperature dependence, Thin films, VPE.

Abstract

We report on metal-organic vapor phase epitaxy (MOVPE) of (0001)InN layers simultaneously grown on a-plane (1120) and c-plane (0001) sapphire substrates. The substrates were nitridated at temperatures from 500 °C to 1050 °C prior to the growth of c-plane InN layers. Nitridation determined the polarity, the crystallinity, and the surface morphology of the InN layers. Nitridation temperatures above 800 °C lead to N-polar InN layers, while nitridation temperatures from 700 °C to 750 °C produce mixed-polar InN layers, and nitridation temperatures from 500 °C to 650 °C produce In-polar InN layers. The roughness and crystallinity of the InN layers are correlated with the changes of polarity. The incorporation of nitrogen into the nitridation layers at different nitridation temperatures was measured. A strong N-Al bond signal after nitridation is correlated with N-polarity layers after overgrowth.

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Pascal:13-0219408

Le document en format XML

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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium nitride</term>
<term>Crystal growth</term>
<term>Crystallinity</term>
<term>Growth from vapor</term>
<term>Growth mechanism</term>
<term>III-V compound</term>
<term>Indium nitride</term>
<term>MOVPE method</term>
<term>Mixed layer</term>
<term>Monocrystals</term>
<term>Nitridation</term>
<term>Polarity</term>
<term>Roughness</term>
<term>Sapphire</term>
<term>Surface morphology</term>
<term>Temperature dependence</term>
<term>Thin films</term>
<term>VPE</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Nitruration</term>
<term>Polarité</term>
<term>Mécanisme croissance</term>
<term>Composé III-V</term>
<term>Méthode MOVPE</term>
<term>Epitaxie phase vapeur</term>
<term>Cristallinité</term>
<term>Morphologie surface</term>
<term>Couche mélangée</term>
<term>Couche mince</term>
<term>Rugosité</term>
<term>Dépendance température</term>
<term>Méthode phase vapeur</term>
<term>Croissance cristalline</term>
<term>Nitrure d'indium</term>
<term>Nitrure d'aluminium</term>
<term>Monocristal</term>
<term>Saphir</term>
<term>InN</term>
<term>Substrat métal</term>
<term>Substrat saphir</term>
<term>8165L</term>
<term>8110A</term>
<term>8115K</term>
<term>8110B</term>
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<front><div type="abstract" xml:lang="en">We report on metal-organic vapor phase epitaxy (MOVPE) of (0001)InN layers simultaneously grown on a-plane (1120) and c-plane (0001) sapphire substrates. The substrates were nitridated at temperatures from 500 °C to 1050 °C prior to the growth of c-plane InN layers. Nitridation determined the polarity, the crystallinity, and the surface morphology of the InN layers. Nitridation temperatures above 800 °C lead to N-polar InN layers, while nitridation temperatures from 700 °C to 750 °C produce mixed-polar InN layers, and nitridation temperatures from 500 °C to 650 °C produce In-polar InN layers. The roughness and crystallinity of the InN layers are correlated with the changes of polarity. The incorporation of nitrogen into the nitridation layers at different nitridation temperatures was measured. A strong N-Al bond signal after nitridation is correlated with N-polarity layers after overgrowth.</div>
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<fA08 i1="01" i2="1" l="ENG"><s1>Role of nitridation on polarity and growth of InN by metal-organic vapor phase epitaxy</s1>
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<fC01 i1="01" l="ENG"><s0>We report on metal-organic vapor phase epitaxy (MOVPE) of (0001)InN layers simultaneously grown on a-plane (1120) and c-plane (0001) sapphire substrates. The substrates were nitridated at temperatures from 500 °C to 1050 °C prior to the growth of c-plane InN layers. Nitridation determined the polarity, the crystallinity, and the surface morphology of the InN layers. Nitridation temperatures above 800 °C lead to N-polar InN layers, while nitridation temperatures from 700 °C to 750 °C produce mixed-polar InN layers, and nitridation temperatures from 500 °C to 650 °C produce In-polar InN layers. The roughness and crystallinity of the InN layers are correlated with the changes of polarity. The incorporation of nitrogen into the nitridation layers at different nitridation temperatures was measured. A strong N-Al bond signal after nitridation is correlated with N-polarity layers after overgrowth.</s0>
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<s4>INC</s4>
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<s4>INC</s4>
<s5>74</s5>
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<fN21><s1>203</s1>
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<fN44 i1="01"><s1>OTO</s1>
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Role of nitridation on polarity and growth of InN by metal-organic vapor phase epitaxy

Role of nitridation on polarity and growth of InN by metal-organic vapor phase epitaxy

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